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Vishay SI8402DB-T1-E1
MOSFET N-CH 20V 5.3A 2X2 4-MFP
Manufacturer # :SI8402DB-T1-E1
Manufacturer :Vishay
Dasenic # :SI8402DB-T1-E1-DS
Datasheet :
SI8402DB-T1-E1 Datasheet
SI8402DB-T1-E1 DatasheetCustomer # :
Description : MOSFET N-CH 20V 5.3A 2X2 4-MFP
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 3.0600 | $ 3.06 |
In Stock: 87
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 3.06
Total :$ 3.06
Delivery :
Payment :
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SI8402DB-T1-E1 information
Vishay SI8402DB-T1-E1 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-
- Mounting Type:Surface Mount
- Package / Case:4-XFBGA, CSPBGA
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:4-Microfoot
- Power Dissipation ( Max):-
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:5.3A (Ta)
- Rds On ( Max) @ Id, Vgs:37mOhm @ 1A, 4.5V
- Vgs(th) ( Max) @ Id:1V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:26 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:-
- Drive Voltage ( Max Rds On, Min Rds On):-
- Vgs ( Max):-
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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