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Vishay SI7900AEDN-T1-E3
Manufacturer # :SI7900AEDN-T1-E3
Manufacturer :Vishay
Dasenic # :SI7900AEDN-T1-E3-DS
Datasheet : SI7900AEDN-T1-E3 Datasheet
Customer # :
Description : MOSFET 2N-CH 20V 6A 1212-8
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In Stock: 14400
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.0944
Total :$ 1.09
Delivery :
Payment :
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SI7900AEDN-T1-E3 information
Vishay SI7900AEDN-T1-E3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Arrays
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® 1212-8 Dual
- Power - Max:1.5W
- Supplier Device Package:PowerPAK® 1212-8 Dual
- F E T Type:2 N-Channel (Dual) Common Drain
- F E T Feature:Logic Level Gate
- Drain to Source Voltage ( Vdss):20V
- Current - Continuous Drain ( Id) @ 25° C:6A
- Rds On ( Max) @ Id, Vgs:26mOhm @ 8.5A, 4.5V
- Vgs(th) ( Max) @ Id:900mV @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:16nC @ 4.5V
- Input Capacitance ( Ciss) ( Max) @ Vds:-
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
SI7900AEDN-T1-E3 provided by Vishay
Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, rectifiers, MOSFETs, optoelectronics, and selected ICs) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader.
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