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Vishay SI7888DP-T1-E3
MOSFET N-CH 30V 9.4A PPAK SO-8
Manufacturer # :SI7888DP-T1-E3
Manufacturer :Vishay
Dasenic # :SI7888DP-T1-E3-DS
Datasheet :
SI7888DP-T1-E3 Datasheet
SI7888DP-T1-E3 DatasheetCustomer # :
Description : MOSFET N-CH 30V 9.4A PPAK SO-8
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 5.3280 | $ 53.28 |
| 3000+ | $ 2.9600 | $ 8880 |
| 30000+ | $ 2.8200 | $ 84600 |
| 150000+ | $ 2.6800 | $ 402000 |
| 300000+ | $ 2.5200 | $ 756000 |
In Stock: 1857
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 5.328
Total :$ 5.33
Delivery :
Payment :
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SI7888DP-T1-E3 information
Vishay SI7888DP-T1-E3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SO-8
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® SO-8
- Power Dissipation ( Max):1.8W (Ta)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:9.4A (Ta)
- Rds On ( Max) @ Id, Vgs:12mOhm @ 12.4A, 10V
- Vgs(th) ( Max) @ Id:2V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:10.5 nC @ 5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:-
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±12V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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