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Vishay SI7882DP-T1-E3
MOSFET N-CH 12V 13A PPAK SO-8
Manufacturer # :SI7882DP-T1-E3
Manufacturer :Vishay
Dasenic # :SI7882DP-T1-E3-DS
Datasheet :
SI7882DP-T1-E3 Datasheet
SI7882DP-T1-E3 DatasheetCustomer # :
Description : MOSFET N-CH 12V 13A PPAK SO-8
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 6.0600 | $ 6.06 |
| 10+ | $ 5.0200 | $ 50.2 |
| 100+ | $ 4.1600 | $ 416 |
In Stock: 804
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 6.06
Total :$ 6.06
Delivery :
Payment :
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SI7882DP-T1-E3 information
Vishay SI7882DP-T1-E3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SO-8
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® SO-8
- Power Dissipation ( Max):1.9W (Ta)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):12 V
- Current - Continuous Drain ( Id) @ 25° C:13A (Ta)
- Rds On ( Max) @ Id, Vgs:5.5mOhm @ 17A, 4.5V
- Vgs(th) ( Max) @ Id:1.4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:30 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:-
- Drive Voltage ( Max Rds On, Min Rds On):2.5V, 4.5V
- Vgs ( Max):±8V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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