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Vishay SI7852DP-T1-GE3
MOSFET N-CH 80V 7.6A PPAK SO-8
Manufacturer # :SI7852DP-T1-GE3
Manufacturer :Vishay
Dasenic # :SI7852DP-T1-GE3-DS
Datasheet :
SI7852DP-T1-GE3 Datasheet
SI7852DP-T1-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 80V 7.6A PPAK SO-8
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 40+ | $ 1.1791 | $ 47.16 |
| 85+ | $ 1.1030 | $ 93.76 |
| 130+ | $ 1.0651 | $ 138.46 |
| 185+ | $ 0.9889 | $ 182.95 |
| 240+ | $ 0.9509 | $ 228.22 |
In Stock: 19892
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.1791
Total :$ 1.18
Delivery :
Payment :
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SI7852DP-T1-GE3 information
Vishay SI7852DP-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SO-8
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® SO-8
- Power Dissipation ( Max):1.9W (Ta)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):80 V
- Current - Continuous Drain ( Id) @ 25° C:7.6A (Ta)
- Rds On ( Max) @ Id, Vgs:16.5mOhm @ 10A, 10V
- Vgs(th) ( Max) @ Id:2V @ 250µA (Min)
- Gate Charge ( Qg) ( Max) @ Vgs:41 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:-
- Drive Voltage ( Max Rds On, Min Rds On):6V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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