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Vishay SI7846DP-T1-GE3
MOSFET N-CH 150V 4A PPAK SO-8
Manufacturer # :SI7846DP-T1-GE3
Manufacturer :Vishay
Dasenic # :SI7846DP-T1-GE3-DS
Datasheet :
SI7846DP-T1-GE3 Datasheet
SI7846DP-T1-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 150V 4A PPAK SO-8
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 2.4300 | $ 2.43 |
| 10+ | $ 1.8720 | $ 18.72 |
| 100+ | $ 1.3590 | $ 135.9 |
| 500+ | $ 1.1340 | $ 567 |
| 1000+ | $ 1.0710 | $ 1071 |
In Stock: 11483
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 2.43
Total :$ 2.43
Delivery :
Payment :
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SI7846DP-T1-GE3 information
Vishay SI7846DP-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SO-8
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® SO-8
- Power Dissipation ( Max):1.9W (Ta)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):150 V
- Current - Continuous Drain ( Id) @ 25° C:4A (Ta)
- Rds On ( Max) @ Id, Vgs:50mOhm @ 5A, 10V
- Vgs(th) ( Max) @ Id:4.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:36 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:-
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±20V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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