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Vishay SI7846DP-T1-E3
MOSFET N-CH 150V 4A PPAK SO-8
Manufacturer # :SI7846DP-T1-E3
Manufacturer :Vishay
Dasenic # :SI7846DP-T1-E3-DS
Datasheet :
SI7846DP-T1-E3 Datasheet
SI7846DP-T1-E3 DatasheetCustomer # :
Description : MOSFET N-CH 150V 4A PPAK SO-8
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.0090 | $ 0.01 |
| 10+ | $ 0.0090 | $ 0.09 |
| 100+ | $ 0.0090 | $ 0.9 |
| 500+ | $ 0.0090 | $ 4.5 |
| 1000+ | $ 0.0090 | $ 9 |
In Stock: 26799
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.009
Total :$ 0.01
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Payment :
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SI7846DP-T1-E3 information
Vishay SI7846DP-T1-E3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SO-8
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® SO-8
- Power Dissipation ( Max):1.9W (Ta)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):150 V
- Current - Continuous Drain ( Id) @ 25° C:4A (Ta)
- Rds On ( Max) @ Id, Vgs:50mOhm @ 5A, 10V
- Vgs(th) ( Max) @ Id:4.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:36 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:-
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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