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Vishay SI7601DN-T1-E3
MOSFET P-CH 20V 16A PPAK1212-8
Manufacturer # :SI7601DN-T1-E3
Manufacturer :Vishay
Dasenic # :SI7601DN-T1-E3-DS
Datasheet :
SI7601DN-T1-E3 Datasheet
SI7601DN-T1-E3 DatasheetCustomer # :
Description : MOSFET P-CH 20V 16A PPAK1212-8
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 1.3896 | $ 13.9 |
| 3000+ | $ 0.7720 | $ 2316 |
| 6000+ | $ 0.7353 | $ 4411.8 |
| 9000+ | $ 0.7013 | $ 6311.7 |
In Stock: 513
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.3896
Total :$ 1.39
Delivery :
Payment :
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SI7601DN-T1-E3 information
Vishay SI7601DN-T1-E3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-50°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® 1212-8
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® 1212-8
- Power Dissipation ( Max):3.8W (Ta), 52W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:16A (Tc)
- Rds On ( Max) @ Id, Vgs:19.2mOhm @ 11A, 4.5V
- Vgs(th) ( Max) @ Id:1.6V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:27 nC @ 5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1870 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):2.5V, 4.5V
- Vgs ( Max):±12V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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