Images are for reference only.
1 : $4.1400
First-time registration with orders over $2,000 receives a $100 coupon. Register Now !
Vishay SI7491DP-T1-E3
MOSFET P-CH 30V 11A PPAK SO-8
Manufacturer # :SI7491DP-T1-E3
Manufacturer :Vishay
Dasenic # :SI7491DP-T1-E3-DS
Datasheet :
SI7491DP-T1-E3 Datasheet
SI7491DP-T1-E3 DatasheetCustomer # :
Description : MOSFET P-CH 30V 11A PPAK SO-8
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 4.1400 | $ 4.14 |
In Stock: 1479
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 4.14
Total :$ 4.14
Delivery :
Payment :
Help you to save your cost and time
Strict quality inspection and Reliable package for goods
Fast Reliable delivery to save time
Provide 365 days warranty after-sales service
SI7491DP-T1-E3 information
Vishay SI7491DP-T1-E3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SO-8
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® SO-8
- Power Dissipation ( Max):1.8W (Ta)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:11A (Ta)
- Rds On ( Max) @ Id, Vgs:8.5mOhm @ 18A, 10V
- Vgs(th) ( Max) @ Id:3V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:85 nC @ 5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:-
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
Related Products Recommended
We can prompt fulfill customer requests for electronic components, even for scarce parts in the market.
