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Vishay SI7430DP-T1-E3
Manufacturer # :SI7430DP-T1-E3
Manufacturer :Vishay
Dasenic # :SI7430DP-T1-E3-DS
Datasheet : SI7430DP-T1-E3 Datasheet
Customer # :
Description : MOSFET N-CH 150V 26A PPAK SO-8
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In Stock: 12000
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.6524
Total :$ 1.65
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SI7430DP-T1-E3 information
Vishay SI7430DP-T1-E3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SO-8
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® SO-8
- Power Dissipation ( Max):5.2W (Ta), 64W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):150 V
- Current - Continuous Drain ( Id) @ 25° C:26A (Tc)
- Rds On ( Max) @ Id, Vgs:45mOhm @ 5A, 10V
- Vgs(th) ( Max) @ Id:4.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:43 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1735 pF @ 50 V
- Drive Voltage ( Max Rds On, Min Rds On):8V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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