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Vishay SI7190ADP-T1-RE3
MOSFET N-CH 250V 4.3A/14.4A PPAK
Manufacturer # :SI7190ADP-T1-RE3
Manufacturer :Vishay
Dasenic # :SI7190ADP-T1-RE3-DS
Datasheet :
SI7190ADP-T1-RE3 Datasheet
SI7190ADP-T1-RE3 DatasheetCustomer # :
Description : MOSFET N-CH 250V 4.3A/14.4A PPAK
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 24+ | $ 1.2330 | $ 29.59 |
| 500+ | $ 1.1880 | $ 594 |
| 2000+ | $ 1.1340 | $ 2268 |
| 3000+ | $ 1.0980 | $ 3294 |
| 9000+ | $ 1.0530 | $ 9477 |
In Stock: 3888
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.233
Total :$ 1.23
Delivery :
Payment :
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SI7190ADP-T1-RE3 information
Vishay SI7190ADP-T1-RE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SO-8
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® SO-8
- Power Dissipation ( Max):5W (Ta), 56.8W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):250 V
- Current - Continuous Drain ( Id) @ 25° C:4.3A (Ta), 14.4A (Tc)
- Rds On ( Max) @ Id, Vgs:102mOhm @ 4.3A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:22.4 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:860 pF @ 100 V
- Drive Voltage ( Max Rds On, Min Rds On):7.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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