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Vishay SI7143DP-T1-GE3
MOSFET P-CH 30V 35A PPAK SO-8
Manufacturer # :SI7143DP-T1-GE3
Manufacturer :Vishay
Dasenic # :SI7143DP-T1-GE3-DS
Datasheet :
SI7143DP-T1-GE3 Datasheet
SI7143DP-T1-GE3 DatasheetCustomer # :
Description : MOSFET P-CH 30V 35A PPAK SO-8
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.8505 | $ 0.85 |
| 10+ | $ 0.7020 | $ 7.02 |
| 50+ | $ 0.6588 | $ 32.94 |
| 100+ | $ 0.5436 | $ 54.36 |
| 200+ | $ 0.5175 | $ 103.5 |
In Stock: 49955
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.8505
Total :$ 0.85
Delivery :
Payment :
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SI7143DP-T1-GE3 information
Vishay SI7143DP-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-50°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SO-8
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® SO-8
- Power Dissipation ( Max):4.2W (Ta), 35.7W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:35A (Tc)
- Rds On ( Max) @ Id, Vgs:10mOhm @ 16.1A, 10V
- Vgs(th) ( Max) @ Id:2.8V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:71 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2230 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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