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Vishay SI7117DN-T1-E3
MOSFET P-CH 150V 2.17A PPAK
Manufacturer # :SI7117DN-T1-E3
Manufacturer :Vishay
Dasenic # :SI7117DN-T1-E3-DS
Datasheet :
SI7117DN-T1-E3 Datasheet
SI7117DN-T1-E3 DatasheetCustomer # :
Description : MOSFET P-CH 150V 2.17A PPAK
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 1.1340 | $ 1.13 |
| 10+ | $ 0.9360 | $ 9.36 |
| 100+ | $ 0.7254 | $ 72.54 |
| 500+ | $ 0.6156 | $ 307.8 |
| 1000+ | $ 0.5013 | $ 501.3 |
In Stock: 12472
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.134
Total :$ 1.13
Delivery :
Payment :
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SI7117DN-T1-E3 information
Vishay SI7117DN-T1-E3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® 1212-8
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® 1212-8
- Power Dissipation ( Max):3.2W (Ta), 12.5W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):150 V
- Current - Continuous Drain ( Id) @ 25° C:2.17A (Tc)
- Rds On ( Max) @ Id, Vgs:1.2Ohm @ 500mA, 10V
- Vgs(th) ( Max) @ Id:4.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:12 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:510 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):6V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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