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Vishay SI7112DN-T1-E3
MOSFET N-CH 30V 11.3A PPAK1212-8
Manufacturer # :SI7112DN-T1-E3
Manufacturer :Vishay
Dasenic # :SI7112DN-T1-E3-DS
Datasheet :
SI7112DN-T1-E3 Datasheet
SI7112DN-T1-E3 DatasheetCustomer # :
Description : MOSFET N-CH 30V 11.3A PPAK1212-8
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 50+ | $ 0.9464 | $ 47.32 |
| 120+ | $ 0.7766 | $ 93.19 |
| 180+ | $ 0.7523 | $ 135.41 |
| 250+ | $ 0.7281 | $ 182.03 |
| 320+ | $ 0.7038 | $ 225.22 |
In Stock: 8736
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.9464
Total :$ 0.95
Delivery :
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SI7112DN-T1-E3 information
Vishay SI7112DN-T1-E3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-50°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® 1212-8
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® 1212-8
- Power Dissipation ( Max):1.5W (Ta)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:11.3A (Tc)
- Rds On ( Max) @ Id, Vgs:7.5mOhm @ 17.8A, 10V
- Vgs(th) ( Max) @ Id:1.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:27 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2610 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±12V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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