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Vishay SI7104DN-T1-E3
MOSFET N-CH 12V 35A PPAK 1212-8
Manufacturer # :SI7104DN-T1-E3
Manufacturer :Vishay
Dasenic # :SI7104DN-T1-E3-DS
Datasheet :
SI7104DN-T1-E3 Datasheet
SI7104DN-T1-E3 DatasheetCustomer # :
Description : MOSFET N-CH 12V 35A PPAK 1212-8
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 1.8810 | $ 1.88 |
| 10+ | $ 1.5660 | $ 15.66 |
| 100+ | $ 1.2420 | $ 124.2 |
| 250+ | $ 1.1520 | $ 288 |
| 500+ | $ 1.0440 | $ 522 |
In Stock: 9000
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.881
Total :$ 1.88
Delivery :
Payment :
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SI7104DN-T1-E3 information
Vishay SI7104DN-T1-E3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® 1212-8
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® 1212-8
- Power Dissipation ( Max):3.8W (Ta), 52W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):12 V
- Current - Continuous Drain ( Id) @ 25° C:35A (Tc)
- Rds On ( Max) @ Id, Vgs:3.7mOhm @ 26.1A, 4.5V
- Vgs(th) ( Max) @ Id:1.8V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:70 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2800 pF @ 6 V
- Drive Voltage ( Max Rds On, Min Rds On):2.5V, 4.5V
- Vgs ( Max):±12V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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