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Vishay SI7100DN-T1-GE3
MOSFET N-CH 8V 35A PPAK 1212-8
Manufacturer # :SI7100DN-T1-GE3
Manufacturer :Vishay
Dasenic # :SI7100DN-T1-GE3-DS
Datasheet :
SI7100DN-T1-GE3 Datasheet
SI7100DN-T1-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 8V 35A PPAK 1212-8
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 2.3373 | $ 23.37 |
| 3000+ | $ 1.5582 | $ 4674.6 |
| 6000+ | $ 1.4996 | $ 8997.6 |
| 9000+ | $ 1.4411 | $ 12969.9 |
In Stock: 62
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 2.3373
Total :$ 2.34
Delivery :
Payment :
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SI7100DN-T1-GE3 information
Vishay SI7100DN-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-50°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® 1212-8
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® 1212-8
- Power Dissipation ( Max):3.8W (Ta), 52W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):8 V
- Current - Continuous Drain ( Id) @ 25° C:35A (Tc)
- Rds On ( Max) @ Id, Vgs:3.5mOhm @ 15A, 4.5V
- Vgs(th) ( Max) @ Id:1V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:105 nC @ 8 V
- Input Capacitance ( Ciss) ( Max) @ Vds:3810 pF @ 4 V
- Drive Voltage ( Max Rds On, Min Rds On):2.5V, 4.5V
- Vgs ( Max):±8V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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