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Vishay SI6473DQ-T1-E3
MOSFET P-CH 20V 6.2A 8TSSOP
Manufacturer # :SI6473DQ-T1-E3
Manufacturer :Vishay
Dasenic # :SI6473DQ-T1-E3-DS
Datasheet :
SI6473DQ-T1-E3 Datasheet
SI6473DQ-T1-E3 DatasheetCustomer # :
Description : MOSFET P-CH 20V 6.2A 8TSSOP
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 5.0040 | $ 50.04 |
| 3000+ | $ 2.7800 | $ 8340 |
| 30000+ | $ 2.6400 | $ 79200 |
| 150000+ | $ 2.5000 | $ 375000 |
| 300000+ | $ 2.3600 | $ 708000 |
In Stock: 2636
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 5.004
Total :$ 5.00
Delivery :
Payment :
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SI6473DQ-T1-E3 information
Vishay SI6473DQ-T1-E3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-TSSOP (0.173", 4.40mm Width)
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-TSSOP
- Power Dissipation ( Max):1.08W (Ta)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:6.2A (Ta)
- Rds On ( Max) @ Id, Vgs:12.5mOhm @ 9.5A, 4.5V
- Vgs(th) ( Max) @ Id:450mV @ 250µA (Min)
- Gate Charge ( Qg) ( Max) @ Vgs:70 nC @ 5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:-
- Drive Voltage ( Max Rds On, Min Rds On):1.8V, 4.5V
- Vgs ( Max):±8V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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