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Vishay SI6467BDQ-T1-E3
Manufacturer # :SI6467BDQ-T1-E3
Manufacturer :Vishay
Dasenic # :SI6467BDQ-T1-E3-DS
Datasheet : SI6467BDQ-T1-E3 Datasheet
Customer # :
Description : MOSFET P-CH 12V 6.8A 8-TSSOP
Pricing (USD) : *To apply for a price, please click the Send Target Price button
In Stock: 2444
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 2.72
Total :$ 2.72
Delivery :
Payment :
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SI6467BDQ-T1-E3 information
Vishay SI6467BDQ-T1-E3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-
- Mounting Type:Surface Mount
- Package / Case:8-TSSOP (0.173", 4.40mm Width)
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-TSSOP
- Power Dissipation ( Max):-
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):12 V
- Current - Continuous Drain ( Id) @ 25° C:6.8A (Ta)
- Rds On ( Max) @ Id, Vgs:12.5mOhm @ 8A, 4.5V
- Vgs(th) ( Max) @ Id:850mV @ 450µA
- Gate Charge ( Qg) ( Max) @ Vgs:70 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:-
- Drive Voltage ( Max Rds On, Min Rds On):-
- Vgs ( Max):-
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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