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Vishay SI6463BDQ-T1-GE3
MOSFET P-CH 20V 6.2A 8-TSSOP
Manufacturer # :SI6463BDQ-T1-GE3
Manufacturer :Vishay
Dasenic # :SI6463BDQ-T1-GE3-DS
Datasheet :
SI6463BDQ-T1-GE3 Datasheet
SI6463BDQ-T1-GE3 DatasheetCustomer # :
Description : MOSFET P-CH 20V 6.2A 8-TSSOP
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 2.0000 | $ 2 |
In Stock: 2599
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 2
Total :$ 2.00
Delivery :
Payment :
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SI6463BDQ-T1-GE3 information
Vishay SI6463BDQ-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-
- Mounting Type:Surface Mount
- Package / Case:8-TSSOP (0.173", 4.40mm Width)
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-TSSOP
- Power Dissipation ( Max):-
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:6.2A (Ta)
- Rds On ( Max) @ Id, Vgs:15mOhm @ 7.4A, 4.5V
- Vgs(th) ( Max) @ Id:800mV @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:60 nC @ 5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:-
- Drive Voltage ( Max Rds On, Min Rds On):-
- Vgs ( Max):-
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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