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Vishay SI6463BDQ-T1-GE3

MOSFET P-CH 20V 6.2A 8-TSSOP
part number has RoHS
Manufacturer # :SI6463BDQ-T1-GE3
Manufacturer :Vishay
Dasenic # :SI6463BDQ-T1-GE3-DS
Customer # :
Description : MOSFET P-CH 20V 6.2A 8-TSSOP
Pricing (USD) : *To apply for a price, please click the Send Target Price button
QuantityUnit PriceTotal
1+$ 2.0000$ 2
In Stock: 2599
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 2
Total :$ 2.00
Delivery :
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SI6463BDQ-T1-GE3 information

  • Vishay SI6463BDQ-T1-GE3 technical specifications, attributes, parameters.
  • Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
  • Product Status:Obsolete
  • Operating Temperature:-
  • Mounting Type:Surface Mount
  • Package / Case:8-TSSOP (0.173", 4.40mm Width)
  • Technology:MOSFET (Metal Oxide)
  • Supplier Device Package:8-TSSOP
  • Power Dissipation ( Max):-
  • F E T Type:P-Channel
  • F E T Feature:-
  • Drain to Source Voltage ( Vdss):20 V
  • Current - Continuous Drain ( Id) @ 25° C:6.2A (Ta)
  • Rds On ( Max) @ Id, Vgs:15mOhm @ 7.4A, 4.5V
  • Vgs(th) ( Max) @ Id:800mV @ 250µA
  • Gate Charge ( Qg) ( Max) @ Vgs:60 nC @ 5 V
  • Input Capacitance ( Ciss) ( Max) @ Vds:-
  • Drive Voltage ( Max Rds On, Min Rds On):-
  • Vgs ( Max):-
  • EU RoHS Status:RoHS Compliant
  • REACH Status:Vendor is not defined
  • US ECCN:Provided as per user requirements
  • China RoHS Status:Orange Symbol: Safe for use during the environmental protection period

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