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Vishay SI6423DQ-T1-GE3
MOSFET P-CH 12V 8.2A 8TSSOP
Manufacturer # :SI6423DQ-T1-GE3
Manufacturer :Vishay
Dasenic # :SI6423DQ-T1-GE3-DS
Datasheet :
SI6423DQ-T1-GE3 Datasheet
SI6423DQ-T1-GE3 DatasheetCustomer # :
Description : MOSFET P-CH 12V 8.2A 8TSSOP
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.0090 | $ 0.01 |
| 10+ | $ 0.0090 | $ 0.09 |
| 100+ | $ 0.0090 | $ 0.9 |
| 500+ | $ 0.0090 | $ 4.5 |
| 1000+ | $ 0.0090 | $ 9 |
In Stock: 47338
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.009
Total :$ 0.01
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SI6423DQ-T1-GE3 information
Vishay SI6423DQ-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-TSSOP (0.173", 4.40mm Width)
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-TSSOP
- Power Dissipation ( Max):1.05W (Ta)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):12 V
- Current - Continuous Drain ( Id) @ 25° C:8.2A (Ta)
- Rds On ( Max) @ Id, Vgs:8.5mOhm @ 9.5A, 4.5V
- Vgs(th) ( Max) @ Id:800mV @ 400µA
- Gate Charge ( Qg) ( Max) @ Vgs:110 nC @ 5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:-
- Drive Voltage ( Max Rds On, Min Rds On):1.8V, 4.5V
- Vgs ( Max):±8V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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