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Vishay SI6423ADQ-T1-GE3
MOSFET PCH 20V 10.3/12.5A 8TSSOP
Manufacturer # :SI6423ADQ-T1-GE3
Manufacturer :Vishay
Dasenic # :SI6423ADQ-T1-GE3-DS
Datasheet :
SI6423ADQ-T1-GE3 Datasheet
SI6423ADQ-T1-GE3 DatasheetCustomer # :
Description : MOSFET PCH 20V 10.3/12.5A 8TSSOP
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.8100 | $ 0.81 |
| 10+ | $ 0.6318 | $ 6.32 |
| 100+ | $ 0.5175 | $ 51.75 |
| 500+ | $ 0.4392 | $ 219.6 |
| 1000+ | $ 0.3573 | $ 357.3 |
In Stock: 45737
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.81
Total :$ 0.81
Delivery :
Payment :
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SI6423ADQ-T1-GE3 information
Vishay SI6423ADQ-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-TSSOP (0.173", 4.40mm Width)
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-TSSOP
- Power Dissipation ( Max):1.5W (Ta), 2.2W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:10.3A (Ta), 12.5A (Tc)
- Rds On ( Max) @ Id, Vgs:9.8mOhm @ 10A, 4.5V
- Vgs(th) ( Max) @ Id:1V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:168 nC @ 8 V
- Input Capacitance ( Ciss) ( Max) @ Vds:5875 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):-
- Vgs ( Max):±8V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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