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Vishay Intertechnology SI5908DC-T1-GE3
MOSFET 2N-CH 20V 4.4A 1206-8
Manufacturer # :SI5908DC-T1-GE3
Manufacturer :Vishay Intertechnology
Dasenic # :E49C14-DS
Datasheet :
SI5908DC-T1-GE3 Datasheet
SI5908DC-T1-GE3 DatasheetSample :
Customer # :
Description : MOSFET 2N-CH 20V 4.4A 1206-8 8-SMD, Flat Lead
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.810000 | $ 8.1 |
| 3000+ | $ 0.450000 | $ 1350 |
In Stock: 40196
MOQ :1 PCS
Packaging :8-SMD, Flat Lead
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.81
Total :$ 0.81
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/FETs, MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Package / Case:8-SMD, Flat Lead
- Power - Max:1.1W
- Supplier Device Package:1206-8 ChipFET™
- F E T Type:2 N-Channel (Dual)
- F E T Feature:Logic Level Gate
- Drain to Source Voltage ( Vdss):20V
- Current - Continuous Drain ( Id) @ 25° C:4.4A
- Rds On ( Max) @ Id, Vgs:40mOhm @ 4.4A, 4.5V
- Vgs(th) ( Max) @ Id:1V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:7.5nC @ 4.5V
