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Vishay SI5857DU-T1-E3
MOSFET P-CH 20V 6A PPAK CHIPFET
Manufacturer # :SI5857DU-T1-E3
Manufacturer :Vishay
Dasenic # :SI5857DU-T1-E3-DS
Datasheet :
SI5857DU-T1-E3 Datasheet
SI5857DU-T1-E3 DatasheetCustomer # :
Description : MOSFET P-CH 20V 6A PPAK CHIPFET
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 1.2904 | $ 12.9 |
| 3000+ | $ 0.7169 | $ 2150.7 |
| 6000+ | $ 0.6828 | $ 4096.8 |
| 9000+ | $ 0.6512 | $ 5860.8 |
| 30000+ | $ 0.6302 | $ 18906 |
In Stock: 739
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.2904
Total :$ 1.29
Delivery :
Payment :
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SI5857DU-T1-E3 information
Vishay SI5857DU-T1-E3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® ChipFET™ Single
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® ChipFET™ Single
- Power Dissipation ( Max):2.3W (Ta), 10.4W (Tc)
- F E T Type:P-Channel
- F E T Feature:Schottky Diode (Isolated)
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:6A (Tc)
- Rds On ( Max) @ Id, Vgs:58mOhm @ 3.6A, 4.5V
- Vgs(th) ( Max) @ Id:1.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:17 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:480 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):2.5V, 4.5V
- Vgs ( Max):±12V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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