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Vishay SI5476DU-T1-GE3
MOSFET N-CH 60V 12A CHIPFET
Manufacturer # :SI5476DU-T1-GE3
Manufacturer :Vishay
Dasenic # :SI5476DU-T1-GE3-DS
Datasheet :
SI5476DU-T1-GE3 Datasheet
SI5476DU-T1-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 60V 12A CHIPFET
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.8487 | $ 8.49 |
| 3000+ | $ 0.4715 | $ 1414.5 |
| 6000+ | $ 0.4490 | $ 2694 |
| 9000+ | $ 0.4283 | $ 3854.7 |
In Stock: 9000
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.8487
Total :$ 0.85
Delivery :
Payment :
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SI5476DU-T1-GE3 information
Vishay SI5476DU-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® ChipFET™ Single
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® ChipFET™ Single
- Power Dissipation ( Max):3.1W (Ta), 31W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):60 V
- Current - Continuous Drain ( Id) @ 25° C:12A (Tc)
- Rds On ( Max) @ Id, Vgs:34mOhm @ 4.6A, 10V
- Vgs(th) ( Max) @ Id:3V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:32 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1100 pF @ 30 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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