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Vishay SI5459DU-T1-GE3
MOSFET P-CH 20V 8A PPAK
Manufacturer # :SI5459DU-T1-GE3
Manufacturer :Vishay
Dasenic # :SI5459DU-T1-GE3-DS
Datasheet :
SI5459DU-T1-GE3 Datasheet
SI5459DU-T1-GE3 DatasheetCustomer # :
Description : MOSFET P-CH 20V 8A PPAK
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.3321 | $ 3.32 |
| 3000+ | $ 0.1845 | $ 553.5 |
| 6000+ | $ 0.1800 | $ 1080 |
| 9000+ | $ 0.1791 | $ 1611.9 |
| 12000+ | $ 0.1773 | $ 2127.6 |
In Stock: 25957
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.3321
Total :$ 0.33
Delivery :
Payment :
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SI5459DU-T1-GE3 information
Vishay SI5459DU-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-50°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® ChipFET™ Single
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® ChipFET™ Single
- Power Dissipation ( Max):3.5W (Ta), 10.9W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:8A (Tc)
- Rds On ( Max) @ Id, Vgs:52mOhm @ 6.7A, 4.5V
- Vgs(th) ( Max) @ Id:1.4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:26 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:665 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):2.5V, 4.5V
- Vgs ( Max):±12V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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