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Vishay SI5441BDC-T1-E3
MOSFET P-CH 20V 4.4A 1206-8
Manufacturer # :SI5441BDC-T1-E3
Manufacturer :Vishay
Dasenic # :SI5441BDC-T1-E3-DS
Datasheet :
SI5441BDC-T1-E3 Datasheet
SI5441BDC-T1-E3 DatasheetCustomer # :
Description : MOSFET P-CH 20V 4.4A 1206-8
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 2.8440 | $ 28.44 |
| 3000+ | $ 1.5800 | $ 4740 |
| 30000+ | $ 1.5000 | $ 45000 |
| 150000+ | $ 1.4200 | $ 213000 |
| 300000+ | $ 1.3400 | $ 402000 |
In Stock: 2693
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 2.844
Total :$ 2.84
Delivery :
Payment :
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SI5441BDC-T1-E3 information
Vishay SI5441BDC-T1-E3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SMD, Flat Lead
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:1206-8 ChipFET™
- Power Dissipation ( Max):1.3W (Ta)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:4.4A (Ta)
- Rds On ( Max) @ Id, Vgs:45mOhm @ 4.4A, 4.5V
- Vgs(th) ( Max) @ Id:1.4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:22 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:-
- Drive Voltage ( Max Rds On, Min Rds On):2.5V, 4.5V
- Vgs ( Max):±12V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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