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Vishay SI5435BDC-T1-GE3
MOSFET P-CH 30V 4.3A 1206-8
Manufacturer # :SI5435BDC-T1-GE3
Manufacturer :Vishay
Dasenic # :SI5435BDC-T1-GE3-DS
Datasheet :
SI5435BDC-T1-GE3 Datasheet
SI5435BDC-T1-GE3 DatasheetCustomer # :
Description : MOSFET P-CH 30V 4.3A 1206-8
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 1.9400 | $ 1.94 |
In Stock: 615
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.94
Total :$ 1.94
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SI5435BDC-T1-GE3 information
Vishay SI5435BDC-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SMD, Flat Lead
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:1206-8 ChipFET™
- Power Dissipation ( Max):1.3W (Ta)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:4.3A (Ta)
- Rds On ( Max) @ Id, Vgs:45mOhm @ 4.3A, 10V
- Vgs(th) ( Max) @ Id:3V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:24 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:-
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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