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Vishay SI5424DC-T1-E3
MOSFET N-CH 30V 6A 1206-8
Manufacturer # :SI5424DC-T1-E3
Manufacturer :Vishay
Dasenic # :SI5424DC-T1-E3-DS
Datasheet :
SI5424DC-T1-E3 Datasheet
SI5424DC-T1-E3 DatasheetCustomer # :
Description : MOSFET N-CH 30V 6A 1206-8
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 2.0992 | $ 20.99 |
| 3000+ | $ 1.1662 | $ 3498.6 |
| 6000+ | $ 1.1288 | $ 6772.8 |
| 12000+ | $ 1.0914 | $ 13096.8 |
| 18000+ | $ 1.0472 | $ 18849.6 |
In Stock: 2009
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 2.0992
Total :$ 2.10
Delivery :
Payment :
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SI5424DC-T1-E3 information
Vishay SI5424DC-T1-E3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SMD, Flat Lead
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:1206-8 ChipFET™
- Power Dissipation ( Max):2.5W (Ta), 6.25W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:6A (Tc)
- Rds On ( Max) @ Id, Vgs:24mOhm @ 4.8A, 10V
- Vgs(th) ( Max) @ Id:2.3V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:32 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:950 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±25V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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