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Vishay Intertechnology SI4900DY-T1-E3
MOSFET 2N-CH 60V 5.3A 8-SOIC
Manufacturer # :SI4900DY-T1-E3
Manufacturer :Vishay Intertechnology
Dasenic # :B1A8F7-DS
Datasheet :
SI4900DY-T1-E3 Datasheet
SI4900DY-T1-E3 DatasheetSample :
Customer # :
Description : MOSFET 2N-CH 60V 5.3A 8-SOIC 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Cut Tape (CT) Dasenic-Reel®
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.691000 | $ 6.91 |
| 2500+ | $ 0.383900 | $ 959.75 |
In Stock: 43924
MOQ :1 PCS
Packaging :8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Cut Tape (CT) Dasenic-Reel®
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.691
Total :$ 0.69
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/FETs, MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Technology:MOSFET (Metal Oxide)
- Power - Max:3.1W
- Supplier Device Package:8-SOIC
- Configuration:2 N-Channel (Dual)
- F E T Feature:Logic Level Gate
- Drain to Source Voltage ( Vdss):60V
- Current - Continuous Drain ( Id) @ 25° C:5.3A
- Rds On ( Max) @ Id, Vgs:58mOhm @ 4.3A, 10V
- Vgs(th) ( Max) @ Id:3V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:20nC @ 10V
- Input Capacitance ( Ciss) ( Max) @ Vds:665pF @ 15V
- Series:TrenchFET®
- Base Product Number:SI4900
- Packaging:Dasenic-Reel®
- Packaging:Cut Tape (CT)
- Packaging:Tape & Reel (TR)
