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Vishay SI4829DY-T1-GE3
MOSFET P-CH 20V 2A 8SO
Manufacturer # :SI4829DY-T1-GE3
Manufacturer :Vishay
Dasenic # :SI4829DY-T1-GE3-DS
Datasheet :
SI4829DY-T1-GE3 Datasheet
SI4829DY-T1-GE3 DatasheetCustomer # :
Description : MOSFET P-CH 20V 2A 8SO
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.7294 | $ 7.29 |
| 2500+ | $ 0.4052 | $ 1013 |
| 5000+ | $ 0.3846 | $ 1923 |
| 12500+ | $ 0.3571 | $ 4463.75 |
| 25000+ | $ 0.3489 | $ 8722.5 |
In Stock: 945
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.7294
Total :$ 0.73
Delivery :
Payment :
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SI4829DY-T1-GE3 information
Vishay SI4829DY-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-SOIC
- Power Dissipation ( Max):2W (Ta), 3.1W (Tc)
- F E T Type:P-Channel
- F E T Feature:Schottky Diode (Isolated)
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:2A (Tc)
- Rds On ( Max) @ Id, Vgs:215mOhm @ 2.5A, 4.5V
- Vgs(th) ( Max) @ Id:1.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:8 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:210 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):2.5V, 4.5V
- Vgs ( Max):±12V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:Vendor is not defined
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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