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Vishay SI4825DY-T1-GE3

MOSFET P-CH 30V 8.1A 8SO
part number has RoHS
Manufacturer # :SI4825DY-T1-GE3
Manufacturer :Vishay
Dasenic # :SI4825DY-T1-GE3-DS
Customer # :
Description : MOSFET P-CH 30V 8.1A 8SO
Pricing (USD) : *To apply for a price, please click the Send Target Price button
QuantityUnit PriceTotal
1+$ 2.9600$ 2.96
In Stock: 2691
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 2.96
Total :$ 2.96
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SI4825DY-T1-GE3 information

  • Vishay SI4825DY-T1-GE3 technical specifications, attributes, parameters.
  • Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
  • Product Status:Obsolete
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Technology:MOSFET (Metal Oxide)
  • Supplier Device Package:8-SOIC
  • Power Dissipation ( Max):1.5W (Ta)
  • F E T Type:P-Channel
  • F E T Feature:-
  • Drain to Source Voltage ( Vdss):30 V
  • Current - Continuous Drain ( Id) @ 25° C:8.1A (Ta)
  • Rds On ( Max) @ Id, Vgs:14mOhm @ 11.5A, 10V
  • Vgs(th) ( Max) @ Id:3V @ 250µA
  • Gate Charge ( Qg) ( Max) @ Vgs:71 nC @ 10 V
  • Input Capacitance ( Ciss) ( Max) @ Vds:-
  • Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
  • Vgs ( Max):±25V
  • EU RoHS Status:RoHS Compliant
  • REACH Status:Vendor is not defined
  • US ECCN:Provided as per user requirements
  • China RoHS Status:Orange Symbol: Safe for use during the environmental protection period

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