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Vishay SI4812BDY-T1-E3
MOSFET N-CH 30V 7.3A 8SO
Manufacturer # :SI4812BDY-T1-E3
Manufacturer :Vishay
Dasenic # :SI4812BDY-T1-E3-DS
Datasheet :
SI4812BDY-T1-E3 Datasheet
SI4812BDY-T1-E3 DatasheetCustomer # :
Description : MOSFET N-CH 30V 7.3A 8SO
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 75+ | $ 0.6066 | $ 45.5 |
| 160+ | $ 0.5679 | $ 90.86 |
| 250+ | $ 0.5481 | $ 137.03 |
| 355+ | $ 0.5094 | $ 180.84 |
| 460+ | $ 0.4896 | $ 225.22 |
In Stock: 10800
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.6066
Total :$ 0.61
Delivery :
Payment :
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SI4812BDY-T1-E3 information
Vishay SI4812BDY-T1-E3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-SOIC
- Power Dissipation ( Max):1.4W (Ta)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:7.3A (Ta)
- Rds On ( Max) @ Id, Vgs:16mOhm @ 9.5A, 10V
- Vgs(th) ( Max) @ Id:3V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:13 nC @ 5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:-
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:Vendor is not defined
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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