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Vishay SI4774DY-T1-GE3
MOSFET N-CHANNEL 30V 16A 8SO
Manufacturer # :SI4774DY-T1-GE3
Manufacturer :Vishay
Dasenic # :SI4774DY-T1-GE3-DS
Datasheet :
SI4774DY-T1-GE3 Datasheet
SI4774DY-T1-GE3 DatasheetCustomer # :
Description : MOSFET N-CHANNEL 30V 16A 8SO
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.7800 | $ 0.78 |
| 10+ | $ 0.6020 | $ 6.02 |
In Stock: 1734
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.78
Total :$ 0.78
Delivery :
Payment :
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SI4774DY-T1-GE3 information
Vishay SI4774DY-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TA)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-SOIC
- Power Dissipation ( Max):5W (Tc)
- F E T Type:N-Channel
- F E T Feature:Schottky Diode (Body)
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:16A (Tc)
- Rds On ( Max) @ Id, Vgs:9.5mOhm @ 10A, 10V
- Vgs(th) ( Max) @ Id:2.3V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:14.3 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1025 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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