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Vishay SI4668DY-T1-GE3
MOSFET N-CH 25V 16.2A 8SO
Manufacturer # :SI4668DY-T1-GE3
Manufacturer :Vishay
Dasenic # :SI4668DY-T1-GE3-DS
Datasheet :
SI4668DY-T1-GE3 Datasheet
SI4668DY-T1-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 25V 16.2A 8SO
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 1.5948 | $ 15.95 |
| 2500+ | $ 0.8860 | $ 2215 |
| 10000+ | $ 0.8500 | $ 8500 |
In Stock: 598
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.5948
Total :$ 1.59
Delivery :
Payment :
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SI4668DY-T1-GE3 information
Vishay SI4668DY-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-SOIC
- Power Dissipation ( Max):2.5W (Ta), 5W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):25 V
- Current - Continuous Drain ( Id) @ 25° C:16.2A (Tc)
- Rds On ( Max) @ Id, Vgs:10.5mOhm @ 15A, 10V
- Vgs(th) ( Max) @ Id:2.6V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:42 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1654 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±16V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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