Name: SI4532CDY-T1-GE3
Brand: Vishay
SKU: DS-6114844
Price: 0.3564 USD
Availability: InStock
Rating: 4.8 (3 reviews)

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Vishay SI4532CDY-T1-GE3

MOSFET N/P-CH 30V 6A 8-SOIC

Manufacturer # :SI4532CDY-T1-GE3

Manufacturer :Vishay

Dasenic # :SI4532CDY-T1-GE3-DS

Datasheet :

SI4532CDY-T1-GE3 Datasheet

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Description : MOSFET N/P-CH 30V 6A 8-SOIC

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Quantity	Unit Price	Total
10+	$ 0.3564	$ 3.56
2500+	$ 0.1980	$ 495
5000+	$ 0.1935	$ 967.5
7500+	$ 0.1935	$ 1451.25
10000+	$ 0.1890	$ 1890

In Stock: 21416

MOQ :1 PCS

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Shipping Origin :Shenzhen or Hong Kong Warehouse

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Unit Price :$ 0.3564

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SI4532CDY-T1-GE3 information

Vishay SI4532CDY-T1-GE3 technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Arrays
Product Status:Active
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Power - Max:2.78W
Supplier Device Package:8-SOIC
F E T Type:N and P-Channel
F E T Feature:Standard
Drain to Source Voltage ( Vdss):30V
Current - Continuous Drain ( Id) @ 25° C:6A, 4.3A
Rds On ( Max) @ Id, Vgs:47mOhm @ 3.5A, 10V
Vgs(th) ( Max) @ Id:3V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs:9nC @ 10V
Input Capacitance ( Ciss) ( Max) @ Vds:305pF @ 15V
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
US ECCN:EAR99
China RoHS Status:Green Symbol: Green and environmentally friendly product

Download datasheets and manufacturer documentation for Vishay SI4532CDY-T1-GE3
Datasheet:
SI4532CDY-T1-GE3,

Vishay SI4532CDY-T1-GE3 Environmental and export classification status description
The Vishay Intertechnology SI4532CDY-T1-GE3 is a discrete semiconductor device known as a p-channel enhancement-mode field-effect transistor (FET). It is designed for use in various electronic circuits to control the flow of electrical current. Functions: - Controls the flow of current between the source and drain terminals. - Acts as a switch that can be turned on or off based on the gate voltage applied to it. Applications: - Power management circuits. - Battery charging systems. - Voltage regulation circuits. Alternative Components: - Infineon Technologies IPB033N08N3 G. - ON Semiconductor NTB18N03L. Embedded Modules: - Gate driver circuitry. - Overcurrent protection. Related Q&A: 1. What is the typical voltage handling capability of the SI4532CDY-T1-GE3? - The SI4532CDY-T1-GE3 can typically handle voltages up to -30V at the drain terminal. 2. What is the maximum current rating of the SI4532CDY-T1-GE3? - The maximum continuous drain current for the SI4532CDY-T1-GE3 is around 9.6A. 3. How does the SI4532CDY-T1-GE3 differ from a standard bipolar junction transistor (BJT)? - The SI4532CDY-T1-GE3 is a field-effect transistor, which operates based on the voltage applied to the gate terminal, unlike a BJT that operates based on the current flowing through its base terminal. 4. In what type of package is the SI4532CDY-T1-GE3 typically available? - The SI4532CDY-T1-GE3 is commonly available in a surface-mount D2PAK package. 5. Can the SI4532CDY-T1-GE3 be used in high-frequency switching applications? - The SI4532CDY-T1-GE3 may not be suitable for very high-frequency switching due to its intrinsic capacitances, but it can work well in moderate switching applications.

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SI4532CDY-T1-GE3 provided by Vishay

Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, rectifiers, MOSFETs, optoelectronics, and selected ICs) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader.