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Vishay SI4490DY-T1-E3
MOSFET N-CH 200V 2.85A 8SO
Manufacturer # :SI4490DY-T1-E3
Manufacturer :Vishay
Dasenic # :SI4490DY-T1-E3-DS
Datasheet :
SI4490DY-T1-E3 Datasheet
SI4490DY-T1-E3 DatasheetCustomer # :
Description : MOSFET N-CH 200V 2.85A 8SO
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 1.3853 | $ 13.85 |
| 2500+ | $ 0.7696 | $ 1924 |
| 5000+ | $ 0.7449 | $ 3724.5 |
| 10000+ | $ 0.7202 | $ 7202 |
| 15000+ | $ 0.6955 | $ 10432.5 |
In Stock: 12816
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.3853
Total :$ 1.39
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SI4490DY-T1-E3 information
Vishay SI4490DY-T1-E3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-SOIC
- Power Dissipation ( Max):1.56W (Ta)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):200 V
- Current - Continuous Drain ( Id) @ 25° C:2.85A (Ta)
- Rds On ( Max) @ Id, Vgs:80mOhm @ 4A, 10V
- Vgs(th) ( Max) @ Id:2V @ 250µA (Min)
- Gate Charge ( Qg) ( Max) @ Vgs:42 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:-
- Drive Voltage ( Max Rds On, Min Rds On):6V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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