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Vishay SI4477DY-T1-GE3
Manufacturer # :SI4477DY-T1-GE3
Manufacturer :Vishay
Dasenic # :SI4477DY-T1-GE3-DS
Datasheet : SI4477DY-T1-GE3 Datasheet
Customer # :
Description : MOSFET P-CH 20V 26.6A 8SO
Pricing (USD) : *To apply for a price, please click the Send Target Price button
In Stock: 9000
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.26
Total :$ 1.26
Delivery :
Payment :
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SI4477DY-T1-GE3 information
Vishay SI4477DY-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-SOIC
- Power Dissipation ( Max):3W (Ta), 6.6W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:26.6A (Tc)
- Rds On ( Max) @ Id, Vgs:6.2mOhm @ 18A, 4.5V
- Vgs(th) ( Max) @ Id:1.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:190 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:4600 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):2.5V, 4.5V
- Vgs ( Max):±12V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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