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Vishay SI4465ADY-T1-E3
MOSFET P-CH 8V 8SOIC
Manufacturer # :SI4465ADY-T1-E3
Manufacturer :Vishay
Dasenic # :SI4465ADY-T1-E3-DS
Datasheet :
SI4465ADY-T1-E3 Datasheet
SI4465ADY-T1-E3 DatasheetCustomer # :
Description : MOSFET P-CH 8V 8SOIC
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.5504 | $ 0.55 |
In Stock: 6564
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.5504
Total :$ 0.55
Delivery :
Payment :
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SI4465ADY-T1-E3 information
Vishay SI4465ADY-T1-E3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-SOIC
- Power Dissipation ( Max):3W (Ta), 6.5W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):8 V
- Current - Continuous Drain ( Id) @ 25° C:13.7A (Ta), 20A (Tc)
- Rds On ( Max) @ Id, Vgs:9mOhm @ 14A, 4.5V
- Vgs(th) ( Max) @ Id:1V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:85 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:-
- Drive Voltage ( Max Rds On, Min Rds On):1.8V, 4.5V
- Vgs ( Max):±8V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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