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Vishay SI4448DY-T1-GE3
MOSFET N-CH 12V 50A 8SO
Manufacturer # :SI4448DY-T1-GE3
Manufacturer :Vishay
Dasenic # :SI4448DY-T1-GE3-DS
Datasheet :
SI4448DY-T1-GE3 Datasheet
SI4448DY-T1-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 12V 50A 8SO
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 4.4559 | $ 44.56 |
| 2500+ | $ 2.9706 | $ 7426.5 |
| 5000+ | $ 2.8324 | $ 14162 |
In Stock: 41
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 4.4559
Total :$ 4.46
Delivery :
Payment :
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SI4448DY-T1-GE3 information
Vishay SI4448DY-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-SOIC
- Power Dissipation ( Max):3.5W (Ta), 7.8W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):12 V
- Current - Continuous Drain ( Id) @ 25° C:50A (Tc)
- Rds On ( Max) @ Id, Vgs:1.7mOhm @ 20A, 4.5V
- Vgs(th) ( Max) @ Id:1V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:150 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:12350 pF @ 6 V
- Drive Voltage ( Max Rds On, Min Rds On):1.8V, 4.5V
- Vgs ( Max):±8V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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