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Vishay SI4447DY-T1-GE3
MOSFET P-CH 40V 3.3A 8SO
Manufacturer # :SI4447DY-T1-GE3
Manufacturer :Vishay
Dasenic # :SI4447DY-T1-GE3-DS
Datasheet :
SI4447DY-T1-GE3 Datasheet
SI4447DY-T1-GE3 DatasheetCustomer # :
Description : MOSFET P-CH 40V 3.3A 8SO
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 180+ | $ 0.2537 | $ 45.67 |
| 380+ | $ 0.2374 | $ 90.21 |
| 590+ | $ 0.2292 | $ 135.23 |
| 850+ | $ 0.2129 | $ 180.97 |
| 1100+ | $ 0.2047 | $ 225.17 |
In Stock: 16200
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.2537
Total :$ 0.25
Delivery :
Payment :
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SI4447DY-T1-GE3 information
Vishay SI4447DY-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-SOIC
- Power Dissipation ( Max):1.1W (Ta)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):40 V
- Current - Continuous Drain ( Id) @ 25° C:3.3A (Ta)
- Rds On ( Max) @ Id, Vgs:72mOhm @ 4.5A, 15V
- Vgs(th) ( Max) @ Id:2.2V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:14 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:805 pF @ 20 V
- Drive Voltage ( Max Rds On, Min Rds On):15V, 10V
- Vgs ( Max):±16V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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