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Vishay SI4446DY-T1-GE3
MOSFET N-CH 40V 3.9A 8SO
Manufacturer # :SI4446DY-T1-GE3
Manufacturer :Vishay
Dasenic # :SI4446DY-T1-GE3-DS
Datasheet :
SI4446DY-T1-GE3 Datasheet
SI4446DY-T1-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 40V 3.9A 8SO
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 1.4400 | $ 1.44 |
In Stock: 2675
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.44
Total :$ 1.44
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Payment :
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SI4446DY-T1-GE3 information
Vishay SI4446DY-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-SOIC
- Power Dissipation ( Max):1.1W (Ta)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):40 V
- Current - Continuous Drain ( Id) @ 25° C:3.9A (Ta)
- Rds On ( Max) @ Id, Vgs:40mOhm @ 5.2A, 10V
- Vgs(th) ( Max) @ Id:1.6V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:12 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:700 pF @ 20 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±12V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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