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SI4200DY-T1-GE3
MOSFET 2N-CH 25V 8A 8SOICDasenic Part Number : CA3F29-DS
Manufacturer :Vishay Intertechnology
Manufacturer Part # : SI4200DY-T1-GE3
Datasheet :Download
Sample :
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Pricing (USD) : Prices are for reference only and aren't final sales prices.
In Stock: 924
MOQ : 1 PCS
Packaging :8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Cut Tape (CT) Dasenic-Reel®
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 1.14
Total : $ 1.14
* Tax not included , All prices are in USD
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- Category:Discrete Semiconductor Devices/FETs, MOSFETs
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Technology:MOSFET (Metal Oxide)
- Power - Max:2.8W
- Supplier Device Package:8-SOIC
- Configuration:2 N-Channel (Dual)
- F E T Feature:Logic Level Gate
- Drain to Source Voltage ( Vdss):25V
- Current - Continuous Drain ( Id) @ 25° C:8A
- Rds On ( Max) @ Id, Vgs:25mOhm @ 7.3A, 10V
- Vgs(th) ( Max) @ Id:2.2V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:12nC @ 10V
- Input Capacitance ( Ciss) ( Max) @ Vds:415pF @ 13V
- Series:TrenchFET®
- Base Product Number:Si4200
- Packaging:Dasenic-Reel®
- Packaging:Cut Tape (CT)
- Packaging:Tape & Reel (TR)