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Vishay SI4104DY-T1-E3
MOSFET N-CH 100V 4.6A 8SO
Manufacturer # :SI4104DY-T1-E3
Manufacturer :Vishay
Dasenic # :SI4104DY-T1-E3-DS
Datasheet :
SI4104DY-T1-E3 Datasheet
SI4104DY-T1-E3 DatasheetCustomer # :
Description : MOSFET N-CH 100V 4.6A 8SO
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 1.6378 | $ 16.38 |
| 2500+ | $ 0.9099 | $ 2274.75 |
| 5000+ | $ 0.8666 | $ 4333 |
| 12500+ | $ 0.8266 | $ 10332.5 |
| 25000+ | $ 0.7999 | $ 19997.5 |
In Stock: 1101
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.6378
Total :$ 1.64
Delivery :
Payment :
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SI4104DY-T1-E3 information
Vishay SI4104DY-T1-E3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-SOIC
- Power Dissipation ( Max):2.5W (Ta), 5W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):100 V
- Current - Continuous Drain ( Id) @ 25° C:4.6A (Tc)
- Rds On ( Max) @ Id, Vgs:105mOhm @ 5A, 10V
- Vgs(th) ( Max) @ Id:4.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:13 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:446 pF @ 50 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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