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Vishay Intertechnology SI4103DY-T1-GE3
MOSFET P-CH 30V 14A/16A 8SO
Manufacturer # :SI4103DY-T1-GE3
Manufacturer :Vishay Intertechnology
Dasenic # :B123DC-DS
Datasheet :
SI4103DY-T1-GE3 Datasheet
SI4103DY-T1-GE3 DatasheetSample :
Customer # :
Description : MOSFET P-CH 30V 14A/16A 8SO 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Cut Tape (CT) Dasenic-Reel®
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.456500 | $ 4.57 |
| 2500+ | $ 0.253600 | $ 634 |
| 5000+ | $ 0.240300 | $ 1201.5 |
| 12500+ | $ 0.222500 | $ 2781.25 |
| 25000+ | $ 0.220300 | $ 5507.5 |
In Stock: 34333
MOQ :1 PCS
Packaging :8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Cut Tape (CT) Dasenic-Reel®
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.4565
Total :$ 0.46
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-SO
- Power Dissipation ( Max):2.5W (Ta), 5.2W (Tc)
- F E T Type:P-Channel
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:14A (Ta), 16A (Tc)
- Rds On ( Max) @ Id, Vgs:7.9mOhm @ 10A, 10V
- Vgs(th) ( Max) @ Id:2V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:140 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:5200 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- Series:TrenchFET® Gen III
- Base Product Number:SI4103
- Packaging:Dasenic-Reel®
- Packaging:Cut Tape (CT)
- Packaging:Tape & Reel (TR)
