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Vishay SI3900DV-T1-GE3
Manufacturer # :SI3900DV-T1-GE3
Manufacturer :Vishay
Dasenic # :SI3900DV-T1-GE3-DS
Datasheet : SI3900DV-T1-GE3 Datasheet
Customer # :
Description : MOSFET 2N-CH 20V 2A 6-TSOP
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In Stock: 23291
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.837
Total :$ 0.84
Delivery :
Payment :
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SI3900DV-T1-GE3 information
Vishay SI3900DV-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Arrays
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:SOT-23-6 Thin, TSOT-23-6
- Power - Max:830mW
- Supplier Device Package:6-TSOP
- F E T Type:2 N-Channel (Dual)
- F E T Feature:Logic Level Gate
- Drain to Source Voltage ( Vdss):20V
- Current - Continuous Drain ( Id) @ 25° C:2A
- Rds On ( Max) @ Id, Vgs:125mOhm @ 2.4A, 4.5V
- Vgs(th) ( Max) @ Id:1.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:4nC @ 4.5V
- Input Capacitance ( Ciss) ( Max) @ Vds:-
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.21.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
SI3900DV-T1-GE3 provided by Vishay
Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, rectifiers, MOSFETs, optoelectronics, and selected ICs) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader.
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