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Vishay SI3879DV-T1-E3
MOSFET P-CH 20V 5A 6TSOP
Manufacturer # :SI3879DV-T1-E3
Manufacturer :Vishay
Dasenic # :SI3879DV-T1-E3-DS
Datasheet :
SI3879DV-T1-E3 Datasheet
SI3879DV-T1-E3 DatasheetCustomer # :
Description : MOSFET P-CH 20V 5A 6TSOP
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.6289 | $ 6.29 |
| 3000+ | $ 0.3494 | $ 1048.2 |
| 6000+ | $ 0.3234 | $ 1940.4 |
| 9000+ | $ 0.3494 | $ 3144.6 |
| 15000+ | $ 0.2975 | $ 4462.5 |
In Stock: 1321
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.6289
Total :$ 0.63
Delivery :
Payment :
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SI3879DV-T1-E3 information
Vishay SI3879DV-T1-E3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:SOT-23-6 Thin, TSOT-23-6
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:6-TSOP
- Power Dissipation ( Max):2W (Ta), 3.3W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:5A (Tc)
- Rds On ( Max) @ Id, Vgs:70mOhm @ 3.5A, 4.5V
- Vgs(th) ( Max) @ Id:1.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:14.5 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:480 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):2.5V, 4.5V
- Vgs ( Max):±12V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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