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Vishay SI3586DV-T1-E3
Manufacturer # :SI3586DV-T1-E3
Manufacturer :Vishay
Dasenic # :SI3586DV-T1-E3-DS
Datasheet : SI3586DV-T1-E3 Datasheet
Customer # :
Description : MOSFET N/P-CH 20V 2.9A 6TSOP
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In Stock: 2960
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.94
Total :$ 1.94
Delivery :
Payment :
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SI3586DV-T1-E3 information
Vishay SI3586DV-T1-E3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Arrays
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:SOT-23-6 Thin, TSOT-23-6
- Power - Max:830mW
- Supplier Device Package:6-TSOP
- F E T Type:N and P-Channel
- F E T Feature:Logic Level Gate
- Drain to Source Voltage ( Vdss):20V
- Current - Continuous Drain ( Id) @ 25° C:2.9A, 2.1A
- Rds On ( Max) @ Id, Vgs:60mOhm @ 3.4A, 4.5V
- Vgs(th) ( Max) @ Id:1.1V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:6nC @ 4.5V
- Input Capacitance ( Ciss) ( Max) @ Vds:-
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
SI3586DV-T1-E3 provided by Vishay
Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, rectifiers, MOSFETs, optoelectronics, and selected ICs) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader.
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