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Vishay SI3499DV-T1-BE3
P-CHANNEL 1.5-V (G-S) MOSFET
Manufacturer # :SI3499DV-T1-BE3
Manufacturer :Vishay
Dasenic # :SI3499DV-T1-BE3-DS
Datasheet :
SI3499DV-T1-BE3 Datasheet
SI3499DV-T1-BE3 DatasheetCustomer # :
Description : P-CHANNEL 1.5-V (G-S) MOSFET
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.8730 | $ 0.87 |
| 10+ | $ 0.7119 | $ 7.12 |
| 100+ | $ 0.5536 | $ 55.36 |
| 500+ | $ 0.4692 | $ 234.6 |
| 1000+ | $ 0.3822 | $ 382.2 |
In Stock: 5220
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.873
Total :$ 0.87
Delivery :
Payment :
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SI3499DV-T1-BE3 information
Vishay SI3499DV-T1-BE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:SOT-23-6 Thin, TSOT-23-6
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:6-TSOP
- Power Dissipation ( Max):1.1W (Ta)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):8 V
- Current - Continuous Drain ( Id) @ 25° C:5.3A (Ta)
- Rds On ( Max) @ Id, Vgs:23mOhm @ 7A, 4.5V
- Vgs(th) ( Max) @ Id:750mV @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:42 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:-
- Drive Voltage ( Max Rds On, Min Rds On):1.5V, 4.5V
- Vgs ( Max):±5V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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