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Vishay SI3460DV-T1-GE3
MOSFET N-CH 20V 5.1A 6TSOP
Manufacturer # :SI3460DV-T1-GE3
Manufacturer :Vishay
Dasenic # :SI3460DV-T1-GE3-DS
Datasheet :
SI3460DV-T1-GE3 Datasheet
SI3460DV-T1-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 20V 5.1A 6TSOP
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 1.9439 | $ 19.44 |
| 3000+ | $ 1.2959 | $ 3887.7 |
| 6000+ | $ 1.2342 | $ 7405.2 |
| 9000+ | $ 1.1773 | $ 10595.7 |
In Stock: 22
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.9439
Total :$ 1.94
Delivery :
Payment :
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SI3460DV-T1-GE3 information
Vishay SI3460DV-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:SOT-23-6 Thin, TSOT-23-6
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:6-TSOP
- Power Dissipation ( Max):1.1W (Ta)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:5.1A (Ta)
- Rds On ( Max) @ Id, Vgs:27mOhm @ 5.1A, 4.5V
- Vgs(th) ( Max) @ Id:450mV @ 1mA (Min)
- Gate Charge ( Qg) ( Max) @ Vgs:20 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:-
- Drive Voltage ( Max Rds On, Min Rds On):1.8V, 4.5V
- Vgs ( Max):±8V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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