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Vishay SI3447CDV-T1-GE3
Manufacturer # :SI3447CDV-T1-GE3
Manufacturer :Vishay
Dasenic # :SI3447CDV-T1-GE3-DS
Datasheet : SI3447CDV-T1-GE3 Datasheet
Customer # :
Description : MOSFET P-CH 12V 7.8A 6TSOP
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In Stock: 2669
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.24
Total :$ 1.24
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Payment :
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SI3447CDV-T1-GE3 information
Vishay SI3447CDV-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:SOT-23-6 Thin, TSOT-23-6
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:6-TSOP
- Power Dissipation ( Max):2W (Ta), 3W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):12 V
- Current - Continuous Drain ( Id) @ 25° C:7.8A (Tc)
- Rds On ( Max) @ Id, Vgs:36mOhm @ 6.3A, 4.5V
- Vgs(th) ( Max) @ Id:1V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:30 nC @ 8 V
- Input Capacitance ( Ciss) ( Max) @ Vds:910 pF @ 6 V
- Drive Voltage ( Max Rds On, Min Rds On):1.8V, 4.5V
- Vgs ( Max):±8V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:Vendor is not defined
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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